There are a number of yield models reported in the literature that
relate fault probability to chip yield Two such models are the
Poisson model
YTot =
Y0e-
and the Negative Binomial model
YTot =
Y01 +
Where Yo is factor which acts as an adjustment to
take into account any non-random defects and
is the average number
of faults of type j.
The Poisson and negative binomial yield
models.
The Poisson model tends to give overly pessimistic yield
predictions for large chips. The negative binomial model proposed
by Stapper includes a clustering parameter (usually of the order 0.3-5) to correct for the
effect of defect clustering and so improve predictions for larger
chips. However, it can be seen from the graphs that these models
only diverge significantly for large average number of faults for a
single defect type. Since many fabrication processes have many
layers and faults associated with each layer are largely
independent the Poisson model is often used with excellent results.
The Negative Binomial model is recommended when fault repair (RAM)
is used. The figure above shows a graphical representation of both
these models. The models require a value of for each defect type. For single layer
breaks and shorts the value of is
calculated using
= Ac(
x)D(x)dx
where xmin is the minimum feature size of the
layout, Ac(x) is the critical area for
defect size x and D(x) is defect density
function. For critical areas that are independent of defect size
(pinhole critical areas)
=
AcD0
where Ac is the critical area and
D0 is the number of defects per unit area. For
contacts is determined by
=
NiFi
where Ni is the number of contacts and
Fi is the failure rate of these contacts.
A yield model requires both critical
areas and defect data . The
EYES tool can provide all the necessary
critical area information and can combine it with process defect
data to generate an accurate yield model.